DSpace - Tor Vergata: Item 2108/737

Please use this identifier to cite or link to this item: http://hdl.handle.net/2108/737

Title:	Gallium nitride-based device simulation and development
Authors:	Di Carlo, Aldo Russo, Stefano
Keywords:	GaN device simulation Monte-Carlo drift-diffusion HEMT Schottky diode
Issue Date:	8-Jan-2009
Abstract:	Since its reappearance in the early 1990s gallium nitride (GaN) has been regarded as a very interesting and highly promising material system for both optical and microwave high-power electronic applications. Over the last fifteen years researchers all around the world have made great efforts in order to redeem these promises. GaN-based optical applications have first reached the stage of commercialization while microwave high-power electronics are on the verge of their commercial breakthrough. The value of the worldwide GaN device market, which at present is about $3.5 billion, is estimated to be $7.2 billion by the year 2009.
Description:	20. ciclo
URI:	http://hdl.handle.net/2108/737
Appears in Collections:	Tesi di dottorato in ingegneria

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